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What the parameters mean.

Depletion layer p.d.

The potential difference (voltage) set up in the depletion layer by the combining holes and electrons. This p.d. must be overcome for the diode to conduct. For a silicon junction the p.d is about 0.6V and for germanium about 0.2V.

Reverse leakage current.

When a PN junction is reverse biased in a transistor or a diode, a very small leakage current will flow, due mainly to thermal activity within the semiconductor material "shaking loose" free electrons, which then form the leakage current. Typically a germanium device may have a reverse leakage current of several micro-Amperes but in silicon devices it is much smaller, only a few nano-Amperes

Forward current.

The maximum current a diode may pass when forward biased (anode + cathode -) without the device being damaged.

Max. reverse voltage.

The maximum voltage that may be applied to a diode when it is reverse biased (anode - cathode +) without damage to the device, (also called the Reverse breakdown voltage).

Temperature Stability.

The amount the current changes (rises) per degree Celsius from the normal value (usually measured at 70°C)

Germanium Diodes.

Germanium Point Contact Diode

Fig. 3.1 Germanium Point Contact Diode.

Germanium diodes are a type that has been in use since the early days of radio and although they have been largely superceded by silicon signal diodes and integrated circuits, they may still be found as signal diodes in older radio circuits, where they are used in such applications as radio signal detectors (demodulators) where the voltages involved in demodulating AM radio signals are likely to be small, less than 1Vpp (0.5Vpk). Germanium diodes will conduct at a forward voltage of only about 0.15V, but a silicon diode will not start to conduct until a forward voltage (positive on the anode) of 0.6V is reached.

As shown in Fig 3.2 the demodulator that recovers the audio signal from the amplitude modulated (AM) radio waves can use a germanium diode as a rectifier to remove the unwanted half of the AM signal. It works in a similar way to a rectifier diode in a simple power supply; it passes one half of the incoming radio signal and blocks the other half. The main differences being that the frequency of operation is much higher, also the voltages used in a demodulator are tiny by comparison to a mains (line) power supply.

Demodulation of a small amplitude signal using a Germanium Point Contact Diode

Fig. 3.2 A simple diode demodulator using germanium gives an output for smaller signals than is possible using silicon.

 

Junction Capacitance.

The point contact diode illustrated in Fig 3.1 has another useful advantage over the silicon rectifier; the area of junction is very small. This also means that the junction capacitance will be very small, much smaller than that of a Silicon junction diode. This allows the point contact diode to operate at higher frequencies than an ordinary silicon junction diode, although some modern silicon diodes are available with very small juction areas allowing them also to operate at high frequencies.

The junction of a diode is basically an insulating layer (the depletion layer) sandwiched between two conductors, the P type and N type areas, it is therefore effectively a capacitor. If this junction capacitance is too large, it will reduce the effectiveness of the circuit at high frequencies; the whole waveform will pass through the diode, now effectively a capacitor, instead of one half cycle being removed by the rectifying action of the diode. Therefore at high frequencies no rectification would take place. Because the radio AM demodulator must work at high (radio) frequencies, the germanium diode, with its very small junction capacitance is ideal for the purpose.

The Germanium diode will not pass large currents - only a few milli-amperes, but that is all that is needed in a radio application such as a demodulator. Germanium diodes are therefore useful for radio frequency circuits involving small amplitude signals.

The advantages and disadvantages of silicon and germanium diodes are summarised in Table 3.1 below:

Table 3.1 Diodes

Parameter

Germanium

Silicon

Comments

Depletion layer p.d.

0.15V

0.6V

Germanium can be useful for low voltage applications.

Forward current

A few milli-Amperes

Tens of Amperes

Silicon much better for high current applications.

Reverse leakage current

A few micro-amperes

A few nano-amperes

Germanium 1000 times more leaky than silicon.

Max. reverse voltage

Volts

Hundreds of volts

Silicon the only real choice for high voltage applications.

Temperature stability

Poor

Good

Germanium more sensitive to temperature. Can be a problem or can be useful.

Junction capacitance

Very low (point contact)

Comparatively high

This is a useful feature for high frequency use. Note: low capacitance silicon diodes are also available but their capacitance is still higher than point contact type.

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