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• 1. Semiconductors
• 2. Diodes
• 3. Bipolar Junction Transistors
• 4. Field Effect Transistors
• 5. Opto-Coupled Devices
• 6. Thyristors,Triacs & Diacs
• 7. Transistor Faults

Module 3.7

Bipolar Junction Transistor Quiz

Try this quiz based on bipolar transistors. Hopefully it'll be easy. Submit your answers but don't be disappointed if you get answers wrong. All the information you need is on this website. Find the right answer and learn about transistors as you go.

• a) To create a high voltage gradient between the base and collector regions.
• b) To help prevent collector/base breakdown.
• c) To ensure the voltage difference between base and collector is kept as low as possible.
• d) To prevent holes contaminating the N type collector region.

2.

The forward junction potential for a silicon junction is:

• a) 0.015 Volts
• b) 0.15 Volts
• c) 0.06 Volts
• d) 0.6 Volts

3.

Refer to Fig. 3.7.1. What do the graphs shown illustrate?

• a) The transfer characteristics of a BJT in common emitter mode.
• b) The output characteristics of a BJT in common emitter mode.
• c) The transfer characteristics of a BJT in common collector mode.
• d) The mutual characteristics of a BJT in common emitter mode.

4.

For a NPN silicon bipolar transistor, which of the following statements is true?

• a) A thin area of the collector near to the base is heavily doped.
• b) A thin area of the emitter near to the base is heavily doped.
• c) The resistivity of the collector decreases near to the base.
• d) A thin area of the collector near to the base is lightly doped.

5.

How many individual transistors will be fabricated on an integrated circuit termed a MSI device?

• a) Less than one hundred.
• b) Several hundreds.
• c) Several thousands.
• d) Several millions.

6.

Fig. 3.7.2 illustrates a typical construction for a silicon planar NPN transistor. What is the function of the layer marked X

• a) Lightly doped collector layer.
• b) Heavily doped base layer.
• c) Heavily doped collector layer.
• d) Lightly doped base layer.

7.

The voltage gain of a bipolar transistor used in Common Collector (emitter follower) mode will be:

• a) About 50 to 100
• b) About 50 to 800
• c) 1 (Unity)
• d) Several thousand

8.

The number of valence electrons in a silicon atom is:

• a) Three
• b) Five
• c) Eight
• d) Four

9.

To increase the number of free electrons in silicon for use in transistors, manufacturers add small amounts of:

• a) Germanium
• b) Aluminium
• c) Boron
• d) Arsenic

10.

What would be a typical output impedance of a bipolar transistor connected in Common Base mode?

• a) A few Ohms.
• b) About 1Megohm.
• c) A few Kilohms.
• d) Several Megohms.

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